IPB100N12S305ATMA1 vs IPB100N04S4H2ATMA1 Vergleich
Detaillierter Direktvergleich von IPB100N12S305ATMA1 von Infineon und IPB100N04S4H2ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPB100N12S305ATMA1 | IPB100N04S4H2ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,25 | $1,42 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS Power MOSFET | — |
| Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 120 V | 40 V |
| Continuous Drain Current (ID) | 100 A (Tc) | — |
| Power Dissipation (PD) | 300 W (Tc) | — |
| On-Resistance (RDS(on)) | 4.8 mOhm (typical) | — |
| Total Gate Charge (Qg) | 185 nC | — |
| Betriebstemperaturbereich | -55 C to +175 C (TJ) | — |
| Gehäuse / Bauform | PG-TO263-3-1 (D2PAK, surface mount) | — |
| Montageart | Surface Mount | Surface Mount |
| Anzahl der Pins | 3 (Gate, Drain, Source) | — |
| Automotive Qualification | AEC-Q101 Qualified | AEC-Q101 qualified |
| Feuchtigkeitsempfindlichkeitsgrad (MSL) | MSL1 (up to 260 C peak reflow) | — |
| Avalanche Tested | 100% Avalanche Tested | — |
| RoHS Compliance | RoHS Compliant (Green Product) | Compliant (Green Product) |
| FET Type | — | N-Channel, Enhancement Mode |
| Technology | — | OptiMOS-T2 (trench gate) |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| RDS(on) at VGS=10V | — | 2.4 mΩ typical |
| Maximum Power Dissition (PD) at TC=25C | — | 115 W |
| Betriebs-Sperrschichttemperatur | — | -55C to +175C |
| Storage Temperature | — | [DATA_NEEDED: storage temp range] |
| Gehäuse | — | PG-TO263-3-2 (D2PAK-2) Surface Mount |
| MSL-Level | — | MSL1 (up to 260C peak reflow) |
| Avalanche Energy (EAS) | — | 100% avalanche tested |