IPB110P06LMATMA1 vs IPD038N06N3GATMA1 Vergleich
Detaillierter Direktvergleich von IPB110P06LMATMA1 von Infineon und IPD038N06N3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPB110P06LMATMA1 | IPD038N06N3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,31 | $0,65 |
| FET Type | P-Channel | N-Channel MOSFET |
| Technology | OptiMOS (trench MOSFET) | OptiMOS trench MOSFET |
| Drain-Source Voltage (VDS) | -60 V | 60 V |
| Continuous Drain Current (ID) at TC=25C | -100 A | — |
| Maximum Power Dissipation (PD) at TC=25C | 300 W | — |
| On-State Resistance (RDS(on) max) at VGS=10V | 11 mOhm @ ID=100A | — |
| Gate Threshold Voltage (VGS(th) max) | 2 V @ ID=5.55 mA | — |
| Gate-Source Voltage (VGS max) | +/-20 V | — |
| Betriebstemperaturbereich | -55 C to +175 C (TJ) | [DATA_NEEDED: operating temperature range] |
| Gehäuse / Bauform | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) | — |
| Montageart | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 | — |
| Gate Drive Level | Logic-level compatible | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Series | — | OptiMOS 60V |
| Continuous Drain Current (ID) at Tc | — | 90 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (typ) |
| On-Resistance (RDS(on)) at VGS=10V | — | 3.8 mΩ |
| Total Power Dissipation (PD) at Tc | — | 188 W |
| Gehäuse | — | PG-TO252-3 (DPAK) |
| MSL-Level | — | 1 |
| Halogenfrei | — | Yes |
| Polarity | — | N-Channel |