IPB120N10S405ATMA1 vs IPB027N10N3GATMA1 Vergleich
Detaillierter Direktvergleich von IPB120N10S405ATMA1 von Infineon und IPB027N10N3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPB120N10S405ATMA1 | IPB027N10N3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,10 | $1,62 |
| Transistortyp | N-Channel MOSFET | — |
| Technology | Enhancement Mode (Trench) | OptiMOS 3 (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc | 120 A | — |
| Power Dissipation (PD) at Tc | 190 W | — |
| On-Resistance R_DS(on) (typ) | 5 mΩ at VGS=10 V | — |
| Gehäuse | PG-TO263-3 (D2PAK) Surface Mount | PG-TO263-3 (D2PAK) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 C to +175 C | -55°C to +175°C (TJ) |
| MSL (Moisture Sensitivity Level) | MSL1 (unlimited floor life at ≤30 C / 85% RH) | — |
| Peak Reflow Temperature | 260 C | — |
| Avalanche Tested | 100% (production-screened) | — |
| Automotive Qualification | AEC-Q101 Qualified | — |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| Gate Threshold Voltage (typ) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: typical Qg at VGS=10V] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr - body diode] | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A |
| Power Dissipation (PD) at TC=25°C | — | 300 W |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mΩ |
| On-Resistance RDS(on) typical at VGS=10V | — | 2.7 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical and min/max VGS(th) values] |
| Thermal Resistance Junction-to-Case (RθJC) | — | [DATA_NEEDED: exact °C/W value] |
| Single Pulse Avalanche Energy (EAS) | — | [DATA_NEEDED: datasheet EAS figure] |
| RoHS-Status | — | Compliant |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |