IPB120N10S405ATMA1 vs IPB027N10N3GATMA1 Comparaison
Comparaison détaillée côte à côte de IPB120N10S405ATMA1 par Infineon et IPB027N10N3GATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPB120N10S405ATMA1 | IPB027N10N3GATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,10 | $1,62 |
| Type de transistor | N-Channel MOSFET | — |
| Technology | Enhancement Mode (Trench) | OptiMOS 3 (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc | 120 A | — |
| Power Dissipation (PD) at Tc | 190 W | — |
| On-Resistance R_DS(on) (typ) | 5 mΩ at VGS=10 V | — |
| Boîtier | PG-TO263-3 (D2PAK) Surface Mount | PG-TO263-3 (D2PAK) |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | -55 C to +175 C | -55°C to +175°C (TJ) |
| MSL (Moisture Sensitivity Level) | MSL1 (unlimited floor life at ≤30 C / 85% RH) | — |
| Peak Reflow Temperature | 260 C | — |
| Avalanche Tested | 100% (production-screened) | — |
| Automotive Qualification | AEC-Q101 Qualified | — |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| Gate Threshold Voltage (typ) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: typical Qg at VGS=10V] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr - body diode] | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A |
| Power Dissipation (PD) at TC=25°C | — | 300 W |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mΩ |
| On-Resistance RDS(on) typical at VGS=10V | — | 2.7 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical and min/max VGS(th) values] |
| Thermal Resistance Junction-to-Case (RθJC) | — | [DATA_NEEDED: exact °C/W value] |
| Single Pulse Avalanche Energy (EAS) | — | [DATA_NEEDED: datasheet EAS figure] |
| Statut RoHS | — | Compliant |
| Niveau MSL | — | [DATA_NEEDED: moisture sensitivity level] |