IPB120P04P404ATMA1 vs IPB120P04P404ATMA2 Vergleich
Detaillierter Direktvergleich von IPB120P04P404ATMA1 von Infineon und IPB120P04P404ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB120P04P404ATMA2 - 40V P-Channel 120A OptiMOS MOSFET | Infineon
IPB120P04P404ATMA2 ✓ AktivSpezifikationsvergleich
| Parameter | IPB120P04P404ATMA1 | IPB120P04P404ATMA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,18 | $1,62 |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide), Enhancement Mode, OptiMOS-P2 | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tc | 120 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-State Resistance (RDS(on)) | 3.5 mΩ at VGS = -10 V, ID = -100 A | — |
| Gate-Source Threshold Voltage (VGS(th)) | -4 V at ID = -340 µA (max) | — |
| Total Gate Charge (Qg) | 205 nC at VGS = -10 V | — |
| Reverse Transfer Capacitance (Crss) | 14.79 nF at 25 V | — |
| Continuous Power Dissipation (PD) at Tc | 136 W | — |
| Single-Pulse Avalanche Energy (EAS) | 78 mJ | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Gehäuse | PG-TO263-3 (D2PAK), 3-pin (2 + tab), surface mount | PG-TO263-3-2 (D2PAK) |
| MSL-Level | MSL1 (260 °C peak reflow) | — |
| AEC-Q100/101 Qualification | AEC-Q101 qualified | — |
| Avalanche Tested | 100 % avalanche tested | — |
| RoHS / Green | Green package, RoHS compliant | — |
| Montageart | Surface Mount (D2PAK, exposed tab) | Surface Mount |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPB120P04P404ATMA2 |
| Series | — | OptiMOS-P2 |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) @ Tc=25C | — | 120 A |
| On-Resistance (RDS(on)) @ VGS=-10V, ID=-100A | — | 3.8 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) @ VGS=-10V | — | 205 nC |
| Input Capacitance (Ciss) @ VDS=25V | — | 14,790 pF |
| Power Dissipation (PD) @ Tc=25C | — | 136 W |
| Betriebstemperaturbereich | — | -55 C to +175 C (TJ) |
| Pin-Anzahl | — | 3 (Tab + 2 Leads) |
| RoHS-Status | — | Compliant |