IPB120P04P404ATMA1 vs IPB120P04P404ATMA2 Comparison
Detailed side-by-side comparison of IPB120P04P404ATMA1 by Infineon and IPB120P04P404ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB120P04P404ATMA1
IPB120P04P404ATMA1 - 40V P-Ch 120A 3.5mΞ© OptiMOS | Infineon
IPB120P04P404ATMA1 β ActiveInfineon
IPB120P04P404ATMA2 - 40V P-Channel 120A OptiMOS MOSFET | Infineon
IPB120P04P404ATMA2 β ActiveSpecification Comparison
| Parameter | IPB120P04P404ATMA1 | IPB120P04P404ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $1.62 |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide), Enhancement Mode, OptiMOS-P2 | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at Tc | 120 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-State Resistance (RDS(on)) | 3.5 mΞ© at VGS = -10 V, ID = -100 A | β |
| Gate-Source Threshold Voltage (VGS(th)) | -4 V at ID = -340 Β΅A (max) | β |
| Total Gate Charge (Qg) | 205 nC at VGS = -10 V | β |
| Reverse Transfer Capacitance (Crss) | 14.79 nF at 25 V | β |
| Continuous Power Dissipation (PD) at Tc | 136 W | β |
| Single-Pulse Avalanche Energy (EAS) | 78 mJ | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | β |
| Package | PG-TO263-3 (D2PAK), 3-pin (2 + tab), surface mount | PG-TO263-3-2 (D2PAK) |
| MSL Level | MSL1 (260 Β°C peak reflow) | β |
| AEC-Q100/101 Qualification | AEC-Q101 qualified | β |
| Avalanche Tested | 100 % avalanche tested | β |
| RoHS / Green | Green package, RoHS compliant | β |
| Mounting Type | Surface Mount (D2PAK, exposed tab) | Surface Mount |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | IPB120P04P404ATMA2 |
| Series | β | OptiMOS-P2 |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) @ Tc=25C | β | 120 A |
| On-Resistance (RDS(on)) @ VGS=-10V, ID=-100A | β | 3.8 mOhm |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) @ VGS=-10V | β | 205 nC |
| Input Capacitance (Ciss) @ VDS=25V | β | 14,790 pF |
| Power Dissipation (PD) @ Tc=25C | β | 136 W |
| Operating Temperature Range | β | -55 C to +175 C (TJ) |
| Pin Count | β | 3 (Tab + 2 Leads) |
| RoHS Status | β | Compliant |