IPB35N10S3L26ATMA1 vs IPG20N10S4L35AATMA1 Vergleich

Detaillierter Direktvergleich von IPB35N10S3L26ATMA1 von Infineon und IPG20N10S4L35AATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IPG20N10S4L35AATMA1 IPG20N10S4L35AATMA1 - 100V Dual N-Ch 20A MOSFET | Infineon

IPG20N10S4L35AATMA1 - 100V Dual N-Ch 20A MOSFET | Infineon

IPG20N10S4L35AATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IPB35N10S3L26ATMA1 IPG20N10S4L35AATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,15 $0,98
Manufacturer Infineon Technologies —
Product Family OptiMOS-T —
Channel Type N-Channel —
Maximum Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC 35 A —
Power Dissipation (PD) at TC 71 W —
Package Type PG-TO263-3 (D2PAK-2) —
Montageart Surface Mount Surface Mount
Pin-Anzahl 3 (Gate, Drain, Source) —
Channel Mode Enhancement —
RDS(on) (typical per Infineon product page) 26.3 mΩ —
Typical Gate Charge Qg @ Vgs 80 nC —
Maximum Drain-Source Resistance Rds 1.7 mΩ (per RS Components listing) —
Minimum Operating Temperature -55 C —
Maximum Power Dissipation Pd 81 W (per RS Components listing) —
RoHS-Status [DATA_NEEDED: RoHS status] —
AEC-Q101 Qualification [DATA_NEEDED: AEC-Q101 qualification status] Yes (automotive grade)
FET Type — Dual N-Channel (2 independent N-MOSFETs)
Technology — OptiMOS™ trench MOSFET, logic-level
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) @ TC=25°C — 20 A (per channel)
RDS(on) Max @ VGS=10 V, ID=17 A — 35 mΩ
Gate Threshold (VGS(th)) — Logic-level (typ. 1.7 V, fully enhanced at 4.5 V)
Power Dissipation (PD) @ TC=25°C — 43 W
Betriebstemperaturbereich — -55°C to +175°C (TJ)
Gehäuse — PG-TDSON-8-10 (TDSON EP, wettable flank)
Avalanche Rating — 100% avalanche tested
RoHS Compliance — Yes (Green Product)
MSL-Level — [DATA_NEEDED: MSL rating]
Drain Connection — Exposed pad (EP) tied to drain

Datenblätter & Ressourcen

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