IPB35N10S3L26ATMA1 vs IPG20N10S4L35AATMA1 对比
详细并排对比 IPB35N10S3L26ATMA1 出自 Infineon 和 IPG20N10S4L35AATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPB35N10S3L26ATMA1 | IPG20N10S4L35AATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.15 | $0.98 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-T | — |
| Channel Type | N-Channel | — |
| Maximum Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC | 35 A | — |
| Power Dissipation (PD) at TC | 71 W | — |
| Package Type | PG-TO263-3 (D2PAK-2) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 3 (Gate, Drain, Source) | — |
| Channel Mode | Enhancement | — |
| RDS(on) (typical per Infineon product page) | 26.3 mΩ | — |
| Typical Gate Charge Qg @ Vgs | 80 nC | — |
| Maximum Drain-Source Resistance Rds | 1.7 mΩ (per RS Components listing) | — |
| Minimum Operating Temperature | -55 C | — |
| Maximum Power Dissipation Pd | 81 W (per RS Components listing) | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | — |
| AEC-Q101 Qualification | [DATA_NEEDED: AEC-Q101 qualification status] | Yes (automotive grade) |
| FET Type | — | Dual N-Channel (2 independent N-MOSFETs) |
| Technology | — | OptiMOS™ trench MOSFET, logic-level |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) @ TC=25°C | — | 20 A (per channel) |
| RDS(on) Max @ VGS=10 V, ID=17 A | — | 35 mΩ |
| Gate Threshold (VGS(th)) | — | Logic-level (typ. 1.7 V, fully enhanced at 4.5 V) |
| Power Dissipation (PD) @ TC=25°C | — | 43 W |
| 工作温度范围 | — | -55°C to +175°C (TJ) |
| 封装 | — | PG-TDSON-8-10 (TDSON EP, wettable flank) |
| Avalanche Rating | — | 100% avalanche tested |
| RoHS Compliance | — | Yes (Green Product) |
| MSL 等级 | — | [DATA_NEEDED: MSL rating] |
| Drain Connection | — | Exposed pad (EP) tied to drain |