IPB60R190C6ATMA1 vs IPD80R600P7ATMA1 Vergleich
Detaillierter Direktvergleich von IPB60R190C6ATMA1 von Infineon und IPD80R600P7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPB60R190C6ATMA1 | IPD80R600P7ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,45 | $0,92 |
| Technology | CoolMOS C6 Superjunction N-Channel MOSFET | CoolMOS P7 super-junction |
| Drain-Source Voltage (VDS) | 600 V | 800 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | — |
| Power Dissipation (PD) at Tc=25C | 151 W | — |
| On-Resistance RDS(on) max at VGS=10V | 190 mOhm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typ) | 3 V (typical) |
| Total Gate Charge (Qg) typ | 32 nC | — |
| Betriebstemperaturbereich | -55C to +150C | -55 C to +150 C |
| Gehäuse | PG-TO263-3 (D2PAK) | PG-TO252-3 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (Gate, Drain, Source) | — |
| MSL-Level | 1 | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | — |
| Avalanche Energy Rated | Yes (EAS per datasheet) | — |
| Continuous Drain Current (ID, Tc) | — | 8 A |
| Pulsed Drain Current (IDM) | — | 22 A |
| On-Resistance (RDS(on), max) | — | 600 mΩ at VGS=10V |
| Maximum Power Dissipation (Ptot) | — | 60 W (Tc) |
| Maximum Gate-Source Voltage (VGS) | — | ±30 V |
| Avalanche Energy, Single Pulse (EAS) | — | 20 mJ |
| Avalanche Energy, Repetitive (EAR) | — | 0.17 mJ |
| Polarity | — | N-Channel |