IPB60R190C6ATMA1 vs IPD80R600P7ATMA1 Comparison
Detailed side-by-side comparison of IPB60R190C6ATMA1 by Infineon and IPD80R600P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPB60R190C6ATMA1 | IPD80R600P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Technology | CoolMOS C6 Superjunction N-Channel MOSFET | CoolMOS P7 super-junction |
| Drain-Source Voltage (VDS) | 600 V | 800 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | — |
| Power Dissipation (PD) at Tc=25C | 151 W | — |
| On-Resistance RDS(on) max at VGS=10V | 190 mOhm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typ) | 3 V (typical) |
| Total Gate Charge (Qg) typ | 32 nC | — |
| Operating Temperature Range | -55C to +150C | -55 C to +150 C |
| Package | PG-TO263-3 (D2PAK) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) | — |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | — |
| Avalanche Energy Rated | Yes (EAS per datasheet) | — |
| Continuous Drain Current (ID, Tc) | — | 8 A |
| Pulsed Drain Current (IDM) | — | 22 A |
| On-Resistance (RDS(on), max) | — | 600 mΩ at VGS=10V |
| Maximum Power Dissipation (Ptot) | — | 60 W (Tc) |
| Maximum Gate-Source Voltage (VGS) | — | ±30 V |
| Avalanche Energy, Single Pulse (EAS) | — | 20 mJ |
| Avalanche Energy, Repetitive (EAR) | — | 0.17 mJ |
| Polarity | — | N-Channel |