IPB60R280P7ATMA1 vs IAUC50N08S5N102ATMA1 Vergleich
Detaillierter Direktvergleich von IPB60R280P7ATMA1 von Infineon und IAUC50N08S5N102ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPB60R280P7ATMA1 | IAUC50N08S5N102ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,88 | $0,51 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 (600 V) | — |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Technology | Superjunction (SJ) | — |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, T_C=25°C) | 12 A | — |
| On-Resistance R_DS(on) max (V_GS=10V) | 280 mOhm | — |
| Gate-Source Threshold V_GS(th) typ | 3.5 V | — |
| Power Dissipation P_D (T_C=25°C) | 53 W | — |
| Gehäuse | PG-TO263-3 (D2PAK) | — |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (2 + Tab) | — |
| Betriebstemperaturbereich | -55 °C to +150 °C (T_j max) | -55°C to +175°C |
| Configuration | Single N-Channel | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Generation | 7th Gen CoolMOS (successor to P6) | — |
| Series | — | OptiMOS 5 |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at TC=25°C | — | 50 A |
| On-Resistance (RDS(on)) | — | 10.2 mΩ @ 25 A, 10 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Total Gate Charge (Qg) | — | 21 nC @ 10 V |
| Input Capacitance (Ciss) | — | 1394 pF @ 40 V |
| Power Dissipation (PD) at TC=25°C | — | 60 W |
| Gehäuse / Bauform | — | PG-TDSON-8-33 |
| Qualification | — | AEC-Q101 |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |