IPB90N06S4L04ATMA2 vs IPB120N10S405ATMA1 Vergleich
Detaillierter Direktvergleich von IPB90N06S4L04ATMA2 von Infineon und IPB120N10S405ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPB90N06S4L04ATMA2 | IPB120N10S405ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,94 | $2,10 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPB90N06S4L04ATMA2 | — |
| Technology | OptiMOS T2, N-channel enhancement mode | Enhancement Mode (Trench) |
| Drain-Source Voltage (V_DSS) | 60 V | — |
| Continuous Drain Current (I_D, Tc) | 90 A | — |
| Pulsed Drain Current (I_D,pulse) | 360 A | — |
| Power Dissipation (P_D, Tc) | 150 W | — |
| On-State Resistance R_DS(on) (typ @ VGS=10V) | 3.4 mΩ | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th)] | — |
| Gate-Source Voltage (V_GS) | ±20 V | — |
| Betriebstemperaturbereich | -55 °C to +175 °C | -55 C to +175 C |
| Gehäuse | PG-TO263-3-2 (D2PAK) | PG-TO263-3 (D2PAK) Surface Mount |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (unlimited floor life) | — |
| Peak Reflow Temperature | 260 °C | 260 C |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Avalanche Tested | 100% avalanche-tested | 100% (production-screened) |
| RoHS / Halogen-Free | Yes (Green Product) | — |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc | — | 120 A |
| Power Dissipation (PD) at Tc | — | 190 W |
| On-Resistance R_DS(on) (typ) | — | 5 mΩ at VGS=10 V |
| MSL (Moisture Sensitivity Level) | — | MSL1 (unlimited floor life at ≤30 C / 85% RH) |
| Automotive Qualification | — | AEC-Q101 Qualified |
| RoHS Compliance | — | Green Product (RoHS compliant) |
| Gate Threshold Voltage (typ) | — | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr - body diode] |