IPB90N06S4L04ATMA2 vs IPB120N10S405ATMA1 Comparison
Detailed side-by-side comparison of IPB90N06S4L04ATMA2 by Infineon and IPB120N10S405ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPB90N06S4L04ATMA2 | IPB120N10S405ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.94 | $2.10 |
| Manufacturer | Infineon Technologies | β |
| Part Number | IPB90N06S4L04ATMA2 | β |
| Technology | OptiMOS T2, N-channel enhancement mode | Enhancement Mode (Trench) |
| Drain-Source Voltage (V_DSS) | 60 V | β |
| Continuous Drain Current (I_D, Tc) | 90 A | β |
| Pulsed Drain Current (I_D,pulse) | 360 A | β |
| Power Dissipation (P_D, Tc) | 150 W | β |
| On-State Resistance R_DS(on) (typ @ VGS=10V) | 3.4 mΞ© | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th)] | β |
| Gate-Source Voltage (V_GS) | Β±20 V | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55 C to +175 C |
| Package | PG-TO263-3-2 (D2PAK) | PG-TO263-3 (D2PAK) Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (unlimited floor life) | β |
| Peak Reflow Temperature | 260 Β°C | 260 C |
| AEC-Q101 Qualification | Qualified (automotive grade) | β |
| Avalanche Tested | 100% avalanche-tested | 100% (production-screened) |
| RoHS / Halogen-Free | Yes (Green Product) | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at Tc | β | 120 A |
| Power Dissipation (PD) at Tc | β | 190 W |
| On-Resistance R_DS(on) (typ) | β | 5 mΞ© at VGS=10 V |
| MSL (Moisture Sensitivity Level) | β | MSL1 (unlimited floor life at β€30 C / 85% RH) |
| Automotive Qualification | β | AEC-Q101 Qualified |
| RoHS Compliance | β | Green Product (RoHS compliant) |
| Gate Threshold Voltage (typ) | β | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |
| Reverse Recovery Charge (Qrr) | β | [DATA_NEEDED: Qrr - body diode] |