IPC100N04S51R7ATMA1 vs IPC100N04S5L1R1ATMA1 Vergleich
Detaillierter Direktvergleich von IPC100N04S51R7ATMA1 von Infineon und IPC100N04S5L1R1ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPC100N04S5L1R1ATMA1 - 40V 100A OptiMOS-5 N-Channel MOSFET | Infineon
IPC100N04S5L1R1ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPC100N04S51R7ATMA1 | IPC100N04S5L1R1ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,82 | $0,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-5 | — |
| Transistortyp | N-Channel MOSFET, Enhancement Mode | N-Channel Enhancement Mode |
| Drain-Source Voltage VDS | 40 V | — |
| Continuous Drain Current ID | 100 A (at TC) | — |
| Pulsed Drain Current IDM | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage VGS | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) value] | Logic Level |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation PD | 115 W (at TC) | — |
| Thermal Resistance RthJC | 1.3 K/W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Gehäuse | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8-34 (SS08 leadless) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (260 °C peak reflow) | MSL1 (unlimited floor life, 260 °C peak reflow) |
| AEC-Q101 Qualified | Yes | — |
| Avalanche Tested | 100% tested | 100% avalanche tested |
| RoHS-Status | Compliant (Green Product) | — |
| Built-in Body Diode | Yes | — |
| Product Family | — | OptiMOS-5 40 V |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC | — | 100 A |
| On-Resistance RDS(on) max | — | 1.1 mΩ |
| Power Dissipation (PD) at TC | — | 150 W |
| Betriebstemperaturbereich | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS Compliance | — | Green Product (RoHS compliant) |