IPC100N04S51R7ATMA1 vs IPC100N04S5L1R1ATMA1 비교
다음의 상세 나란히 비교: IPC100N04S51R7ATMA1 제조: Infineon 및 IPC100N04S5L1R1ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IPC100N04S5L1R1ATMA1 - 40V 100A OptiMOS-5 N-Channel MOSFET | Infineon
IPC100N04S5L1R1ATMA1 ✓ 활성사양 비교
| 파라미터 | IPC100N04S51R7ATMA1 | IPC100N04S5L1R1ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.82 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-5 | — |
| 트랜지스터 유형 | N-Channel MOSFET, Enhancement Mode | N-Channel Enhancement Mode |
| Drain-Source Voltage VDS | 40 V | — |
| Continuous Drain Current ID | 100 A (at TC) | — |
| Pulsed Drain Current IDM | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage VGS | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) value] | Logic Level |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation PD | 115 W (at TC) | — |
| Thermal Resistance RthJC | 1.3 K/W | — |
| 동작 접합 온도 | -55 °C to +175 °C | — |
| 패키지 | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8-34 (SS08 leadless) |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | MSL1 (260 °C peak reflow) | MSL1 (unlimited floor life, 260 °C peak reflow) |
| AEC-Q101 Qualified | Yes | — |
| Avalanche Tested | 100% tested | 100% avalanche tested |
| RoHS 상태 | Compliant (Green Product) | — |
| Built-in Body Diode | Yes | — |
| Product Family | — | OptiMOS-5 40 V |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC | — | 100 A |
| On-Resistance RDS(on) max | — | 1.1 mΩ |
| Power Dissipation (PD) at TC | — | 150 W |
| 동작 온도 범위 | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS Compliance | — | Green Product (RoHS compliant) |