IPC100N04S52R8ATMA1 vs IPC100N04S51R7ATMA1 Vergleich
Detaillierter Direktvergleich von IPC100N04S52R8ATMA1 von Infineon und IPC100N04S51R7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPC100N04S52R8ATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,18 | $0,82 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Continuous Drain Current (ID, Tc=100C) | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th), typ) | [DATA_NEEDED: VGS(th) typical] | — |
| On-State Resistance RDS(on) typ @ VGS=10V | 2.8 mOhm | — |
| On-State Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max] | — |
| Power Dissipation (PD, Tc=25C) | 75 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | -55 °C to +175 °C |
| Gehäuse | PG-TDSON-8-34 (TDSON-8 EP) | PG-TDSON-8-34 (SS08 leadless) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (260C peak reflow) | MSL1 (260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Tested | 100% (per Infineon standard) | 100% tested |
| RoHS / Green Product | Yes (RoHS compliant) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS-5 |
| Transistortyp | — | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage VDS | — | 40 V |
| Continuous Drain Current ID | — | 100 A (at TC) |
| Pulsed Drain Current IDM | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | — | 115 W (at TC) |
| Thermal Resistance RthJC | — | 1.3 K/W |
| AEC-Q101 Qualified | — | Yes |
| RoHS-Status | — | Compliant (Green Product) |
| Built-in Body Diode | — | Yes |