IPC100N04S52R8ATMA1 vs IPC100N04S51R7ATMA1 Comparison
Detailed side-by-side comparison of IPC100N04S52R8ATMA1 by Infineon and IPC100N04S51R7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC100N04S52R8ATMA1
IPC100N04S52R8ATMA1 - 40V 100A N-Ch OptiMOS MOSFET | Infineon
IPC100N04S52R8ATMA1 β ActiveInfineon
IPC100N04S51R7ATMA1
IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon
IPC100N04S51R7ATMA1 β ActiveSpecification Comparison
| Parameter | IPC100N04S52R8ATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $0.82 |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID, Tc=25C) | 100 A | β |
| Continuous Drain Current (ID, Tc=100C) | [DATA_NEEDED: ID at Tc=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | β |
| Gate Threshold Voltage (VGS(th), typ) | [DATA_NEEDED: VGS(th) typical] | β |
| On-State Resistance RDS(on) typ @ VGS=10V | 2.8 mOhm | β |
| On-State Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max] | β |
| Power Dissipation (PD, Tc=25C) | 75 W | β |
| Operating Junction Temperature | -55C to +175C | -55 Β°C to +175 Β°C |
| Package | PG-TDSON-8-34 (TDSON-8 EP) | PG-TDSON-8-34 (SS08 leadless) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (260C peak reflow) | MSL1 (260 Β°C peak reflow) |
| Automotive Qualification | AEC-Q101 qualified | β |
| Avalanche Tested | 100% (per Infineon standard) | 100% tested |
| RoHS / Green Product | Yes (RoHS compliant) | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS-5 |
| Transistor Type | β | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage VDS | β | 40 V |
| Continuous Drain Current ID | β | 100 A (at TC) |
| Pulsed Drain Current IDM | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | β | 115 W (at TC) |
| Thermal Resistance RthJC | β | 1.3 K/W |
| AEC-Q101 Qualified | β | Yes |
| RoHS Status | β | Compliant (Green Product) |
| Built-in Body Diode | β | Yes |