IPC100N04S5L1R1ATMA1 vs BSC050N04LSGATMA1 Vergleich
Detaillierter Direktvergleich von IPC100N04S5L1R1ATMA1 von Infineon und BSC050N04LSGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPC100N04S5L1R1ATMA1 - 40V 100A OptiMOS-5 N-Channel MOSFET | Infineon
IPC100N04S5L1R1ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPC100N04S5L1R1ATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,86 | $0,41 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-5 40 V | — |
| Transistortyp | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC | 100 A | — |
| On-Resistance RDS(on) max | 1.1 mΩ | — |
| Power Dissipation (PD) at TC | 150 W | — |
| Gate Threshold Voltage VGS(th) | Logic Level | — |
| Betriebstemperaturbereich | -55 °C to +175 °C | -55C to +150C |
| Gehäuse | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (unlimited floor life, 260 °C peak reflow) | 1 |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Tested | 100% avalanche tested | — |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current at 25C (ID, Ta) | — | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | — | 85 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 57 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Technology | — | OptiMOS 3 (trench MOSFET) |
| Avalanche Energy Rated | — | Yes (single-pulse avalanche) |
| RoHS-Status | — | Compliant |