IPC100N04S5L1R1ATMA1 vs BSC050N04LSGATMA1 Comparison
Detailed side-by-side comparison of IPC100N04S5L1R1ATMA1 by Infineon and BSC050N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC100N04S5L1R1ATMA1
IPC100N04S5L1R1ATMA1 - 40V 100A OptiMOS-5 N-Channel MOSFET | Infineon
IPC100N04S5L1R1ATMA1 β ActiveInfineon
BSC050N04LSGATMA1
BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
BSC050N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | IPC100N04S5L1R1ATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $0.41 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS-5 40 V | β |
| Transistor Type | N-Channel Enhancement Mode | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at TC | 100 A | β |
| On-Resistance RDS(on) max | 1.1 mΞ© | β |
| Power Dissipation (PD) at TC | 150 W | β |
| Gate Threshold Voltage VGS(th) | Logic Level | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55C to +150C |
| Package | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (unlimited floor life, 260 Β°C peak reflow) | 1 |
| Automotive Qualification | AEC-Q101 qualified | β |
| Avalanche Tested | 100% avalanche tested | β |
| RoHS Compliance | Green Product (RoHS compliant) | β |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 40 V |
| Gate-to-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current at 25C (ID, Ta) | β | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | β | 85 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 57 W |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Technology | β | OptiMOS 3 (trench MOSFET) |
| Avalanche Energy Rated | β | Yes (single-pulse avalanche) |
| RoHS Status | β | Compliant |