IPC100N04S5L1R5ATMA1 vs BSC019N08NS5ATMA1 Vergleich
Detaillierter Direktvergleich von IPC100N04S5L1R5ATMA1 von Infineon und BSC019N08NS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPC100N04S5L1R5ATMA1 | BSC019N08NS5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,18 | $1,78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 40 V | — |
| Polarity / Channel Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) Max | 40 V | — |
| Gate-Source Voltage (VGS) Max | 20 V | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current value] |
| Power Dissipation (PD) at Tc=25C | 115 W | — |
| On-Resistance RDS(on) at VGS=10 V | 1.5 mOhm (typ) | — |
| On-Resistance RDS(on) at VGS=4.5 V | 1.8 mOhm (typ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | — |
| Betriebstemperaturbereich | -55C to +175C | -55 C to +150 C |
| Gehäuse | PG-TDSON-8-34 (SS08 leadless) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (260C peak reflow) | 1 |
| AEC-Q101 Qualified | Yes | — |
| RoHS-Status | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% | — |
| Technology | — | OptiMOS 5 (N-channel trench) |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at TA=25C | — | 28 A |
| Continuous Drain Current (ID) at TC=25C | — | 237 A |
| On-Resistance RDS(on) max at VGS=10V | — | 1.9 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 3.0 V |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (TA=25C) | — | 3 W |
| Power Dissipation (TC=25C) | — | 214 W |
| Avalanche Rated | — | Yes |