IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
Teilenummer: IPC100N04S5L1R5ATMA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.92 | $1,92 |
| 10 | $1.72 | $17,20 |
| 100 | $1.52 | $152,00 |
| 500 | $1.32 | $660,00 |
| 1.000 | $1.18 | $1.180,00 |
IPC100N04S5L1R5ATMA1 Übersicht
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field applied to the gate terminal to control current flow between drain and source. OptiMOS-5 represents Infineon's fifth-generation trench MOSFET platform, offering best-in-class figure-of-merit (FOM = RDS(on) × Qg), lower package resistance and inductance, and improved switching performance versus prior generations. This part occupies the upper tier of the OptiMOS-5 40 V family alongside IPC100N04S5L-1R1 (1.1 mΩ). It is a member of the broader power MOSFET family within discrete semiconductors, sitting above generic trench MOSFETs and below wide-bandgap GaN/SiC devices in performance-per-watt.
Key features include logic-level drive (fully enhanced at VGS=4.5 V), AEC-Q101 qualification for automotive use, MSL1 moisture sensitivity up to 260 °C peak reflow, 175 °C maximum operating junction temperature, RoHS-compliant green product construction, and 100% avalanche-tested ruggedness. The SS08 leadless package minimizes parasitic source inductance, which directly reduces switching losses in high-frequency applications.
Architecturally, the device uses an enhancement-mode N-channel trench cell structure optimized for low RDS(on) per unit silicon area. At VDS=20 V and ID=50 A pulsed, the typical on-resistance reaches its datasheet figure of merit. The gate charge is balanced against output capacitance to give low switching loss in both hard-switched and soft-switched topologies. Avalanche ruggedness is verified at 100% on production units, providing margin against unclamped inductive switching events such as load-dump transients in automotive environments.
Typical applications include automotive 12 V and 24 V high-current switching such as EPS (electric power steering) motors, electronic parking brakes, brake-by-wire systems, transmission control units, battery management and protection OR-ing, hot-swap controllers, BLDC motor drives for pumps and fans, DC-DC converter synchronous rectification, and industrial high-current solenoid driving. The wide SOA at 175 °C operation also supports under-hood and chassis-mount designs with restricted cooling.
When designing with this device, ensure that the gate drive can source/sink sufficient peak current to achieve sub-100 ns switching at full load, and place the gate driver as close to the gate pad as possible to minimize the gate-loop inductance. A 10 Ω gate resistor is recommended to dampen ringing. For OR-ing, add a TVS across the drain-source path to absorb avalanche energy beyond the device's rating. The exposed pad must be soldered to a sufficiently large copper pour to keep RDS(on) rise from self-heating within safe margins.
Drop-in-Alternativen für IPC100N04S5L1R5ATMA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit IPC100N04S5L1R5ATMA1 (gleiche Bauform und Footprint) – abweichend in Package, Operating Temperature Range, Technology, MSL Level, Series.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IPC100N04S5L-1R1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IAUCN04S7N015GATMA1
✅ Drop-In✓ Auf Lager
$2.21 / Stück
Datenblatt ansehen →BSC014N04LSTATMA1
✅ Drop-In✓ Auf Lager
$0.41 / Stück
Datenblatt ansehen →BSC016N04LSGATMA1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IPD50N04S408ATMA1
✅ Drop-In✓ Auf Lager
$0.69 / Stück
Datenblatt ansehen →BSC019N08NS5ATMA1
✅ Drop-In✓ Auf Lager
$1.78 / Stück
Datenblatt ansehen →IPC100N04S5L1R5ATMA1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS-5 40 V |
| Polarity / Channel Type | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | 40 V |
| Gate-Source Voltage (VGS) Max | 20 V |
| Continuous Drain Current (ID) at Tc=25C | 100 A |
| Power Dissipation (PD) at Tc=25C | 115 W |
| On-Resistance RDS(on) at VGS=10 V | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | 1.8 mOhm (typ) |
| Betriebstemperaturbereich | -55C to +175C |
| Gehäuse | PG-TDSON-8-34 (SS08 leadless) |
| Montageart | Surface Mount |
| MSL-Level | MSL1 (260C peak reflow) |
| AEC-Q101 Qualified | Yes |
| RoHS-Status | Compliant (Green Product) |
| Avalanche Tested | 100% |
IPC100N04S5L1R5ATMA1 Pin-Konfiguration
| Pin 1 | Gate — Gate terminal - logic-level drive input |
| Pin 2 | Source — Source terminal (pin 2) |
| Pin 3 | Source — Source terminal (pin 3) |
| Pin 4 | Source — Source terminal (pin 4) |
| Pin 5 | Source — Source terminal (pin 5) |
| Pin 6 | Source — Source terminal (pin 6) |
| Pin 7 | Source — Source terminal (pin 7) |
| Pin 8 | Drain — Drain terminal (also bonded to exposed pad) |
Sicherer Arbeitsbereich (DC), Tj=25C
Typische Anwendungen
IPC100N04S5L1R5ATMA1 ist geeignet für 6 Anwendungs: Electric Power Steering (EPS) Motor Drive, Automotive Battery OR-ing and Hot-Swap, BLDC Motor Drive for Pumps and Fans, Synchronous Rectification in 24V DC-DC Converters, Electronic Parking Brake and Brake-by-Wire, Industrial High-Current Solenoid and Relay Driver.
Electric Power Steering (EPS) Motor Drive
The IPC100N04S5L1R5ATMA1 is well-suited as a high-side or low-side switch in 12 V EPS motor drive H-bridges. Its 1.5 mΩ RDS(on) at VGS=10 V keeps conduction loss below 1.5 W per MOSFET at the typical 25 A RMS phase current, while its 100 A continuous rating provides 4x design margin against stall current transients. The AEC-Q101 qualification and 175 °C junction rating meet the under-hood thermal envelope. Logic-level drive (full enhancement at VGS=4.5 V) eliminates the need for a charge pump when the system MCU runs from a 5 V rail.
Empfohlen
Automotive Battery OR-ing and Hot-Swap
In redundant 12 V battery OR-ing and hot-swap controllers, the IPC100N04S5L1R5ATMA1 serves as the main pass-MOSFET, replacing Schottky diodes to cut conduction loss by an order of magnitude. With 1.5 mΩ RDS(on), the voltage drop at 50 A load is only 75 mV versus 500 mV for a comparable Schottky, and the resulting dissipation of 3.75 W avoids the need for thermal management beyond standard PCB copper. Its 100% avalanche-tested rating protects against reverse-current transients during battery swap events. The AEC-Q101 qualification and 175 °C operating envelope suit chassis-mounted ECUs.
Empfohlen
BLDC Motor Drive for Pumps and Fans
The IPC100N04S5L1R5ATMA1's 100 A continuous current capability supports 12 V BLDC water pumps, oil pumps, and cooling fans used in EV thermal management. Its 1.5 mΩ RDS(on) at VGS=10 V delivers >97% efficiency at 30 A phase current, reducing heatsink cost and enabling compact inline pump housings. The PG-TDSON-8-34 package's exposed thermal pad couples directly to the PCB copper pour, sustaining 115 W dissipation at 25 °C case temperature. Logic-level gate drive allows direct MCU PWM control without a bootstrap supply.
Empfohlen
Synchronous Rectification in 24V DC-DC Converters
As a synchronous rectifier in 24 V to 12 V or 24 V to 5 V buck converters, the IPC100N04S5L1R5ATMA1 replaces Schottky diodes to recover rectification loss. At 20 A load, conduction loss is only 0.6 W versus ~6 W for a comparable Schottky. Its low Qg and small Qoss reduce dead-time loss, allowing switching frequencies up to 200 kHz in compact industrial brick designs. The 40 V VDS rating provides ample margin against 24 V nominal plus transient spikes. AEC-Q101 qualification opens the design to automotive and industrial battery-powered systems.
Empfohlen
Electronic Parking Brake and Brake-by-Wire
The IPC100N04S5L1R5ATMA1's AEC-Q101 qualification and 175 °C operating temperature make it ideal for safety-critical electronic parking brake (EPB) actuators. With 1.5 mΩ RDS(on) and 100 A continuous rating, a single device can drive a typical 25 A peak EPB motor without thermal shutdown at 25 °C ambient. The 100% avalanche testing provides robustness against the inductive kick from the brake motor during release, eliminating the need for an external TVS clamp. The PG-TDSON-8-34 footprint fits within the actuator housing's compact PCB envelope.
Empfohlen
Industrial High-Current Solenoid and Relay Driver
Industrial 24 V hydraulic solenoid and latching relay drivers benefit from the IPC100N04S5L1R5ATMA1's 100 A peak current capability and 1.5 mΩ RDS(on). At a 10 A holding current, the dissipation is only 0.15 W, eliminating the heatsink requirement entirely. The logic-level gate drive allows direct connection to industrial PLC 24 V outputs via a simple gate resistor network. Its 100% avalanche rating and 175 °C junction temperature suit the harsh thermal and inductive-switching environment of factory automation control cabinets.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IPC100N04S5L1R5ATMA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IPC100N04S5L-1R1 | BSC014N04LSTATMA1 | BSC016N04LSGATMA1 | IAUCN04S7N015GATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-34 (SS08) | PG-TDSON-8-34 (SS08) - same | PG-TDSON-8-34 (SS08) - same | PG-TDSON-8-34 (SS08) - same | PG-TDSON-8-34 (SS08) - same |
| Drain-Source Voltage VDS Max | 40 V | 40 V | 40 V | 40 V | 40 V |
| RDS(on) at VGS=10 V | 1.5 mOhm | 1.1 mOhm | 1.4 mOhm | 1.6 mOhm | 1.5 mOhm |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes |
| Operating Temperature Max | 175 C | 175 C | 175 C | 175 C | 175 C |
Wichtigste Unterscheidungsmerkmale
- Lower RDS(on) variant available in identical footprint (vs. IPC100N04S5L-1R1)
- Same family, optimized switching FOM (vs. BSC016N04LSGATMA1)
- 100 A continuous current vs half-rated alternatives (vs. IPD50N04S408ATMA1)
Designhinweise
Estimated: at ID=50 A continuous drain current and RDS(on)=1.5 mΩ, the steady-state conduction loss is approximately P=I²R=50²×0.0015=3.75 W. With the PG-TDSON-8-34 package's typical theta_JA of ~50 C/W on a 1 oz copper pour of 1 square inch, junction temperature rise is ~188 C above ambient, which exceeds the 175 C rating. For continuous 50 A operation, increase the copper pour to at least 4 square inches on both top and bottom layers, or add thermal vias to a bottom-side heat-spreader plane. Below 30 A continuous, the standard 1 square inch copper pour is sufficient.
Place the gate driver within 5 mm of the gate pad to minimize gate-loop inductance. Use a microstrip layout where the gate trace runs over a continuous ground/power plane to control characteristic impedance around 50 Ω. Add a 10 Ω gate-source resistor to dampen ringing caused by the gate-source capacitance and the parasitic gate-loop inductance. Keep the source pad return path wide and short - source inductance directly couples into the gate-drive loop and can cause avalanche at turn-off. The exposed pad must be soldered to a continuous copper pour with multiple thermal vias for rated thermal performance.
Do not exceed VGS=20 V absolute maximum, even transiently. Use a gate-source Zener clamp (e.g. 16 V) for protection against gate-drive overvoltage from PCB-level ESD or driver failure. Do not switch at VDS above 40 V even briefly - avalanche events beyond the rated EAS can degrade the device. For OR-ing applications, ensure the body diode forward current rating is not exceeded during reverse-current commutation events; an external Schottky anti-parallel diode may be required at very high di/dt conditions. Always reference the manufacturer datasheet for EAS and thermal impedance curves when designing the safety margin.
Compliance-Informationen
AEC-Q101 (automotive) qualified per Infineon datasheet. RoHS compliant Green Product. MSL1 rated for 260C peak reflow. 175C max operating junction temperature.
