IPC50N04S5L5R5ATMA1 vs BSC019N06NSATMA1 Vergleich
Detaillierter Direktvergleich von IPC50N04S5L5R5ATMA1 von Infineon und BSC019N06NSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPC50N04S5L5R5ATMA1 | BSC019N06NSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,36 | $0,92 |
| Transistortyp | N-Channel MOSFET | — |
| Mode | Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc) | 50 A | — |
| Maximum Drain Current (silicon-limited, 25 °C) | 60 A | — |
| On-Resistance RDS(on) max @ VGS=10 V | 5.5 mΩ | — |
| Gate Threshold VGS(th) | Logic Level (enhancement at ≤ 4.5 V VGS) | — |
| Power Dissipation (Tc) | 42 W | — |
| Thermal Resistance Junction-to-Case RthJC | 3.6 K/W | — |
| Betriebstemperaturbereich | -55 °C to +175 °C | -55C to +150C (junction) |
| Gehäuse | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| MSL (Moisture Sensitivity Level) | MSL1 | — |
| Peak Reflow Temperature | 260 °C | — |
| Avalanche Rating | 100 % Avalanche Tested | — |
| RoHS / REACH | RoHS Compliant (Green Product) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC019N06NSATMA1 |
| Technology / Family | — | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) Max | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| On-State Resistance RDS(on) Max @ VGS=10V | — | 1.95 mΩ (typ) |
| Gate-Source Threshold Voltage VGS(th) Typ | — | 3.3 V |
| Power Dissipation (PD) at TA=25C | — | 136 W |
| MSL-Level | — | 1 |
| Channel Type | — | N-Channel Enhancement Mode |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes |