IPC50N04S5L5R5ATMA1 vs BSC019N06NSATMA1 对比

详细并排对比 IPC50N04S5L5R5ATMA1 出自 Infineon 和 BSC019N06NSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPC50N04S5L5R5ATMA1 IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon

IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon

IPC50N04S5L5R5ATMA1 ✓ 量产中
Infineon
BSC019N06NSATMA1 BSC019N06NSATMA1 - 60V 100A 1.95mΩ OptiMOS 5 MOSFET | Infineon

BSC019N06NSATMA1 - 60V 100A 1.95mΩ OptiMOS 5 MOSFET | Infineon

BSC019N06NSATMA1 ✓ 量产中

规格对比

参数 IPC50N04S5L5R5ATMA1 BSC019N06NSATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.36 $0.92
晶体管类型 N-Channel MOSFET —
Mode Enhancement Mode —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc) 50 A —
Maximum Drain Current (silicon-limited, 25 °C) 60 A —
On-Resistance RDS(on) max @ VGS=10 V 5.5 mΩ —
Gate Threshold VGS(th) Logic Level (enhancement at ≤ 4.5 V VGS) —
Power Dissipation (Tc) 42 W —
Thermal Resistance Junction-to-Case RthJC 3.6 K/W —
工作温度范围 -55 °C to +175 °C -55C to +150C (junction)
封装 PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) PG-TDSON-8 FL (SuperSO8 5x6 mm)
安装类型 Surface Mount Surface Mount
AEC-Q101 Qualification Qualified (automotive grade) —
MSL (Moisture Sensitivity Level) MSL1 —
Peak Reflow Temperature 260 °C —
Avalanche Rating 100 % Avalanche Tested —
RoHS / REACH RoHS Compliant (Green Product) —
Manufacturer — Infineon Technologies
Part Number — BSC019N06NSATMA1
Technology / Family — OptiMOS 5 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) Max — 60 V
Continuous Drain Current (ID) at TA=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulse rating]
On-State Resistance RDS(on) Max @ VGS=10V — 1.95 mΩ (typ)
Gate-Source Threshold Voltage VGS(th) Typ — 3.3 V
Power Dissipation (PD) at TA=25C — 136 W
MSL 等级 — 1
Channel Type — N-Channel Enhancement Mode
RoHS 状态 — Compliant
Lead-Free — Yes
Avalanche Rated — Yes

数据手册与资源

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