IPC50N04S5L5R5ATMA1 vs IAUC50N08S5N102ATMA1 Vergleich
Detaillierter Direktvergleich von IPC50N04S5L5R5ATMA1 von Infineon und IAUC50N08S5N102ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPC50N04S5L5R5ATMA1 | IAUC50N08S5N102ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,36 | $0,51 |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Mode | Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | 80 V |
| Continuous Drain Current (ID, Tc) | 50 A | — |
| Maximum Drain Current (silicon-limited, 25 °C) | 60 A | — |
| On-Resistance RDS(on) max @ VGS=10 V | 5.5 mΩ | — |
| Gate Threshold VGS(th) | Logic Level (enhancement at ≤ 4.5 V VGS) | — |
| Power Dissipation (Tc) | 42 W | — |
| Thermal Resistance Junction-to-Case RthJC | 3.6 K/W | — |
| Betriebstemperaturbereich | -55 °C to +175 °C | -55°C to +175°C |
| Gehäuse | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) | — |
| Montageart | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| MSL (Moisture Sensitivity Level) | MSL1 | — |
| Peak Reflow Temperature | 260 °C | — |
| Avalanche Rating | 100 % Avalanche Tested | — |
| RoHS / REACH | RoHS Compliant (Green Product) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| Continuous Drain Current (ID) at TC=25°C | — | 50 A |
| On-Resistance (RDS(on)) | — | 10.2 mΩ @ 25 A, 10 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Total Gate Charge (Qg) | — | 21 nC @ 10 V |
| Input Capacitance (Ciss) | — | 1394 pF @ 40 V |
| Power Dissipation (PD) at TC=25°C | — | 60 W |
| Gehäuse / Bauform | — | PG-TDSON-8-33 |
| Qualification | — | AEC-Q101 |
| RoHS-Status | — | Compliant |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |