IPC90N04S5L3R3ATMA1 vs BSC0501NSIATMA1 Vergleich
Detaillierter Direktvergleich von IPC90N04S5L3R3ATMA1 von Infineon und BSC0501NSIATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon
IPC90N04S5L3R3ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPC90N04S5L3R3ATMA1 | BSC0501NSIATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,96 | $0,65 |
| Manufacturer | Infineon Technologies | Infineon |
| Product Family | OptiMOS 5 40V | OptiMOS 5 25V/30V |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Continuous Drain Current (ID) at TC=25°C | 90 A | — |
| On-Resistance RDS(on) max at VGS=10V | 3.3 mΩ | — |
| On-Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage VGS(th) | 1.7 V to 2.7 V (logic level) | — |
| Total Power Dissipation (TC=25°C) | 62 W | — |
| Betriebs-Sperrschichttemperatur | -55°C to +175°C | -55C to +150C |
| Storage Temperature Range | [DATA_NEEDED: storage temp range] | — |
| Gehäuse | PG-TDSON-8-34 (TDSON-8) | PG-TDSON-8-6 (SuperSO8) |
| Montageart | Surface Mount | Surface Mount |
| MSL Moisture Sensitivity | MSL1 (per JEDEC J-STD-020) | — |
| Peak Reflow Temperature | 260°C | — |
| Qualification | AEC-Q101 automotive qualified | — |
| Avalanche Tested | 100% (production-level) | — |
| RoHS Compliance | Compliant (Green Product) | — |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 29 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 50 W |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at 10V VGS] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |
| RoHS-Status | — | Compliant |
| Avalanche Rated | — | Yes |
| Technology | — | Trench-gate OptiMOS 5 |