IPC90N04S5L3R3ATMA1 vs BSC0501NSIATMA1 비교

다음의 상세 나란히 비교: IPC90N04S5L3R3ATMA1 제조: Infineon 및 BSC0501NSIATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IPC90N04S5L3R3ATMA1 BSC0501NSIATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.96 $0.65
Manufacturer Infineon Technologies Infineon
Product Family OptiMOS 5 40V OptiMOS 5 25V/30V
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 40 V 30 V
Continuous Drain Current (ID) at TC=25°C 90 A —
On-Resistance RDS(on) max at VGS=10V 3.3 mΩ —
On-Resistance RDS(on) at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage VGS(th) 1.7 V to 2.7 V (logic level) —
Total Power Dissipation (TC=25°C) 62 W —
동작 접합 온도 -55°C to +175°C -55C to +150C
Storage Temperature Range [DATA_NEEDED: storage temp range] —
패키지 PG-TDSON-8-34 (TDSON-8) PG-TDSON-8-6 (SuperSO8)
실장 유형 Surface Mount Surface Mount
MSL Moisture Sensitivity MSL1 (per JEDEC J-STD-020) —
Peak Reflow Temperature 260°C —
Qualification AEC-Q101 automotive qualified —
Avalanche Tested 100% (production-level) —
RoHS Compliance Compliant (Green Product) —
트랜지스터 유형 — N-Channel MOSFET
Continuous Drain Current (ID) at Ta — 29 A
Continuous Drain Current (ID) at Tc — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Power Dissipation at Ta (PD) — 2.5 W
Power Dissipation at Tc (PD) — 50 W
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at 10V VGS]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
MSL 레벨 — 1 (per JEDEC J-STD-020)
RoHS 상태 — Compliant
Avalanche Rated — Yes
Technology — Trench-gate OptiMOS 5

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청