IPD028N06NF2SATMA1 vs IPD50N06S409ATMA2 Vergleich
Detaillierter Direktvergleich von IPD028N06NF2SATMA1 von Infineon und IPD50N06S409ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD028N06NF2SATMA1 - 60V 139A 2.85mΩ OptiMOS N-MOSFET | Infineon
IPD028N06NF2SATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPD028N06NF2SATMA1 | IPD50N06S409ATMA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,62 | $0,49 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPD028N06NF2SATMA1 | — |
| Transistortyp | N-Channel MOSFET | — |
| Technology Family | OptiMOS 5 60V | — |
| Drain-Source Voltage (VDS) max | 60 V | — |
| Continuous Drain Current (ID) at TA=25°C | 24 A | — |
| Continuous Drain Current (ID) at TC=25°C | 139 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 2.85 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Power Dissipation at TA=25°C | 3 W | — |
| Power Dissipation at TC=25°C | 150 W | — |
| Betriebs-Sperrschichttemperaturbereich | -55 C to +175 C | — |
| Gehäuse | PG-TO252-3 (DPAK) | PG-TO252-3-11 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (Gate, Drain-tab, Source) | 3 (2 + Tab) |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| Packing | Tape & Reel (T&R) | — |
| Technology | — | N-Channel MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | — | 9 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | — | 71 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED] |