IPD028N06NF2SATMA1 vs IPD50N06S409ATMA2 Comparison
Detailed side-by-side comparison of IPD028N06NF2SATMA1 by Infineon and IPD50N06S409ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD028N06NF2SATMA1 - 60V 139A 2.85mΞ© OptiMOS N-MOSFET | Infineon
IPD028N06NF2SATMA1 β ActiveInfineon
IPD50N06S409ATMA2 - 60V 50A 9mΞ© OptiMOS N-Ch MOSFET | Infineon
IPD50N06S409ATMA2 β ActiveSpecification Comparison
| Parameter | IPD028N06NF2SATMA1 | IPD50N06S409ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.49 |
| Manufacturer | Infineon Technologies | β |
| Part Number | IPD028N06NF2SATMA1 | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology Family | OptiMOS 5 60V | β |
| Drain-Source Voltage (VDS) max | 60 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 24 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 139 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) typ @ VGS=10V | 2.85 mΞ© | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typ] | β |
| Power Dissipation at TA=25Β°C | 3 W | β |
| Power Dissipation at TC=25Β°C | 150 W | β |
| Operating Junction Temperature Range | -55 C to +175 C | β |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3-11 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain-tab, Source) | 3 (2 + Tab) |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Packing | Tape & Reel (T&R) | β |
| Technology | β | N-Channel MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at Tc | β | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | β | 9 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | β | 71 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Automotive Qualification | β | AEC-Q101 |
| Lead-Free / Halogen-Free | β | [DATA_NEEDED] |