IPD038N06NF2SATMA1 vs BSC050NE2LSATMA1 Vergleich
Detaillierter Direktvergleich von IPD038N06NF2SATMA1 von Infineon und BSC050NE2LSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD038N06NF2SATMA1 | BSC050NE2LSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,95 | $0,36 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS (Trench) | OptiMOS 25V (trench) |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TC=25°C | 120 A | — |
| Continuous Drain Current (ID) at TA=25°C | 20 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 3.85 mΩ max | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Typical Gate Charge (Qg) at VGS=10V | 68 nC | — |
| Input Capacitance (Ciss) | 6700 pF | — |
| Output Capacitance (Coss) | 670 pF | — |
| Reverse Transfer Capacitance (Crss) | 43 pF | — |
| Power Dissipation (PD) at TA=25°C | 3 W | — |
| Power Dissipation (PD) at TC=25°C | 107 W | — |
| Betriebs-Sperrschichttemperatur | -55°C to +175°C | — |
| Gehäuse | PG-TO252-3 (DPAK) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Channel Mode | Enhancement | — |
| Drain-Source Voltage (V_DS) | — | 25 V |
| Continuous Drain Current (I_D) at Tc=25C | — | 58 A |
| Continuous Drain Current (I_D) at Ta=25C | — | 39 A |
| R_DS(on) max at V_GS=10V | — | 5 mOhm |
| R_DS(on) typical at V_GS=10V | — | 4.2 mOhm |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Power Dissipation at Tc=25C | — | 28 W |
| Betriebstemperaturbereich | — | -55C to +150C |