IPD038N06NF2SATMA1 vs BSC050NE2LSATMA1 Comparison
Detailed side-by-side comparison of IPD038N06NF2SATMA1 by Infineon and BSC050NE2LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC050NE2LSATMA1
BSC050NE2LSATMA1 - 25V 58A N-Ch OptiMOS MOSFET | Infineon
BSC050NE2LSATMA1 β ActiveSpecification Comparison
| Parameter | IPD038N06NF2SATMA1 | BSC050NE2LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.95 | $0.36 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS (Trench) | OptiMOS 25V (trench) |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 120 A | β |
| Continuous Drain Current (ID) at TA=25Β°C | 20 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 3.85 mΞ© max | β |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| Typical Gate Charge (Qg) at VGS=10V | 68 nC | β |
| Input Capacitance (Ciss) | 6700 pF | β |
| Output Capacitance (Coss) | 670 pF | β |
| Reverse Transfer Capacitance (Crss) | 43 pF | β |
| Power Dissipation (PD) at TA=25Β°C | 3 W | β |
| Power Dissipation (PD) at TC=25Β°C | 107 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Package | PG-TO252-3 (DPAK) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Channel Mode | Enhancement | β |
| Drain-Source Voltage (V_DS) | β | 25 V |
| Continuous Drain Current (I_D) at Tc=25C | β | 58 A |
| Continuous Drain Current (I_D) at Ta=25C | β | 39 A |
| R_DS(on) max at V_GS=10V | β | 5 mOhm |
| R_DS(on) typical at V_GS=10V | β | 4.2 mOhm |
| Gate-Source Voltage (V_GS) max | β | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical] |
| Power Dissipation at Ta=25C | β | 2.5 W |
| Power Dissipation at Tc=25C | β | 28 W |
| Operating Temperature Range | β | -55C to +150C |