IPD038N06NF2SATMA1 vs BSC054N04NSGATMA1 Vergleich
Detaillierter Direktvergleich von IPD038N06NF2SATMA1 von Infineon und BSC054N04NSGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD038N06NF2SATMA1 | BSC054N04NSGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,95 | $0,42 |
| FET Type | N-Channel | — |
| Technology | OptiMOS (Trench) | OptiMOS 3 (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID) at TC=25°C | 120 A | — |
| Continuous Drain Current (ID) at TA=25°C | 20 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 3.85 mΩ max | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Typical Gate Charge (Qg) at VGS=10V | 68 nC | — |
| Input Capacitance (Ciss) | 6700 pF | — |
| Output Capacitance (Coss) | 670 pF | — |
| Reverse Transfer Capacitance (Crss) | 43 pF | — |
| Power Dissipation (PD) at TA=25°C | 3 W | — |
| Power Dissipation (PD) at TC=25°C | 107 W | — |
| Betriebs-Sperrschichttemperatur | -55°C to +175°C | — |
| Gehäuse | PG-TO252-3 (DPAK) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Channel Mode | Enhancement | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC054N04NSGATMA1 |
| Continuous Drain Current (ID) at Tc=25C | — | 81 A |
| Continuous Drain Current (ID) at Ta=25C | — | 17 A |
| On-Resistance RDS(on) max at VGS=10V | — | 5.4 mOhm |
| Power Dissipation at Tc=25C | — | 57 W |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Betriebstemperaturbereich | — | -55C to +150C |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |
| Gate Drive Voltage (recommended) | — | 10 V |
| Lead-Free Reflow | — | Yes |