IPD038N06NF2SATMA1 vs BSC054N04NSGATMA1 비교
다음의 상세 나란히 비교: IPD038N06NF2SATMA1 제조: Infineon 및 BSC054N04NSGATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPD038N06NF2SATMA1 | BSC054N04NSGATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.95 | $0.42 |
| FET Type | N-Channel | — |
| Technology | OptiMOS (Trench) | OptiMOS 3 (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID) at TC=25°C | 120 A | — |
| Continuous Drain Current (ID) at TA=25°C | 20 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 3.85 mΩ max | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Typical Gate Charge (Qg) at VGS=10V | 68 nC | — |
| Input Capacitance (Ciss) | 6700 pF | — |
| Output Capacitance (Coss) | 670 pF | — |
| Reverse Transfer Capacitance (Crss) | 43 pF | — |
| Power Dissipation (PD) at TA=25°C | 3 W | — |
| Power Dissipation (PD) at TC=25°C | 107 W | — |
| 동작 접합 온도 | -55°C to +175°C | — |
| 패키지 | PG-TO252-3 (DPAK) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | Compliant | Compliant |
| Channel Mode | Enhancement | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC054N04NSGATMA1 |
| Continuous Drain Current (ID) at Tc=25C | — | 81 A |
| Continuous Drain Current (ID) at Ta=25C | — | 17 A |
| On-Resistance RDS(on) max at VGS=10V | — | 5.4 mOhm |
| Power Dissipation at Tc=25C | — | 57 W |
| Power Dissipation at Ta=25C | — | 2.5 W |
| 동작 온도 범위 | — | -55C to +150C |
| MSL 레벨 | — | 1 (per JEDEC J-STD-020) |
| Gate Drive Voltage (recommended) | — | 10 V |
| Lead-Free Reflow | — | Yes |