IPD038N06NF2SATMA1 vs IPC90N04S5L3R3ATMA1 Vergleich
Detaillierter Direktvergleich von IPD038N06NF2SATMA1 von Infineon und IPC90N04S5L3R3ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon
IPC90N04S5L3R3ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPD038N06NF2SATMA1 | IPC90N04S5L3R3ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,95 | $0,96 |
| FET Type | N-Channel | N-Channel, Enhancement Mode |
| Technology | OptiMOS (Trench) | — |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID) at TC=25°C | 120 A | 90 A |
| Continuous Drain Current (ID) at TA=25°C | 20 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 3.85 mΩ max | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Typical Gate Charge (Qg) at VGS=10V | 68 nC | — |
| Input Capacitance (Ciss) | 6700 pF | — |
| Output Capacitance (Coss) | 670 pF | — |
| Reverse Transfer Capacitance (Crss) | 43 pF | — |
| Power Dissipation (PD) at TA=25°C | 3 W | — |
| Power Dissipation (PD) at TC=25°C | 107 W | — |
| Betriebs-Sperrschichttemperatur | -55°C to +175°C | -55°C to +175°C |
| Gehäuse | PG-TO252-3 (DPAK) | PG-TDSON-8-34 (TDSON-8) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | — |
| Channel Mode | Enhancement | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 40V |
| On-Resistance RDS(on) max at VGS=10V | — | 3.3 mΩ |
| On-Resistance RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage VGS(th) | — | 1.7 V to 2.7 V (logic level) |
| Total Power Dissipation (TC=25°C) | — | 62 W |
| Storage Temperature Range | — | [DATA_NEEDED: storage temp range] |
| MSL Moisture Sensitivity | — | MSL1 (per JEDEC J-STD-020) |
| Peak Reflow Temperature | — | 260°C |
| Qualification | — | AEC-Q101 automotive qualified |
| Avalanche Tested | — | 100% (production-level) |
| RoHS Compliance | — | Compliant (Green Product) |