IPD068N10N3GATMA1 vs IPB027N10N3GATMA1 Vergleich
Detaillierter Direktvergleich von IPD068N10N3GATMA1 von Infineon und IPB027N10N3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD068N10N3GATMA1 - 100V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD068N10N3GATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPD068N10N3GATMA1 | IPB027N10N3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,65 | $1,62 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPD068N10N3GATMA1 | — |
| Technology | OptiMOS 3 (N-Channel, Enhancement Mode) | OptiMOS 3 (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc | 90 A | — |
| On-Resistance RDS(on) max | 6.8 mOhm | — |
| Power Dissipation (PD) at Tc | 150 W | — |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V (typical) | — |
| Gehäuse | PG-TO252-3 (DPAK, 2 leads + tab) | PG-TO263-3 (D2PAK) |
| Montageart | Surface Mount | Surface Mount |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Channel Type | N-Channel | — |
| Configuration | Single | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 | [DATA_NEEDED: moisture sensitivity level] |
| Packing | Tape & Reel (T/R) | — |
| Qualification | Industrial (non-automotive) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A |
| Power Dissipation (PD) at TC=25°C | — | 300 W |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mΩ |
| On-Resistance RDS(on) typical at VGS=10V | — | 2.7 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical and min/max VGS(th) values] |
| Betriebstemperaturbereich | — | -55°C to +175°C (TJ) |
| Thermal Resistance Junction-to-Case (RθJC) | — | [DATA_NEEDED: exact °C/W value] |
| Single Pulse Avalanche Energy (EAS) | — | [DATA_NEEDED: datasheet EAS figure] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg at VGS=10V] |