IPD068N10N3GATMA1 vs IPB027N10N3GATMA1 比較
詳細な並列比較: IPD068N10N3GATMA1 メーカー: Infineon および IPB027N10N3GATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPD068N10N3GATMA1 | IPB027N10N3GATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.65 | $1.62 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPD068N10N3GATMA1 | — |
| Technology | OptiMOS 3 (N-Channel, Enhancement Mode) | OptiMOS 3 (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc | 90 A | — |
| On-Resistance RDS(on) max | 6.8 mOhm | — |
| Power Dissipation (PD) at Tc | 150 W | — |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V (typical) | — |
| パッケージ | PG-TO252-3 (DPAK, 2 leads + tab) | PG-TO263-3 (D2PAK) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作接合温度 | -55 C to +175 C | — |
| Channel Type | N-Channel | — |
| Configuration | Single | — |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | 1 | [DATA_NEEDED: moisture sensitivity level] |
| Packing | Tape & Reel (T/R) | — |
| Qualification | Industrial (non-automotive) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A |
| Power Dissipation (PD) at TC=25°C | — | 300 W |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mΩ |
| On-Resistance RDS(on) typical at VGS=10V | — | 2.7 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical and min/max VGS(th) values] |
| 動作温度範囲 | — | -55°C to +175°C (TJ) |
| Thermal Resistance Junction-to-Case (RθJC) | — | [DATA_NEEDED: exact °C/W value] |
| Single Pulse Avalanche Energy (EAS) | — | [DATA_NEEDED: datasheet EAS figure] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg at VGS=10V] |