IPD068P03L3GATMA1 vs IPD042P03L3GATMA1 Vergleich
Detaillierter Direktvergleich von IPD068P03L3GATMA1 von Infineon und IPD042P03L3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD068P03L3GATMA1 | IPD042P03L3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,51 | $0,28 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS P-Channel Power MOSFET | — |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (V_DS) | -30 V | — |
| Continuous Drain Current (I_D) at T_C | -70 A | — |
| Pulsed Drain Current (I_D,pulse) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (P_D) at T_C | 100 W | — |
| R_DS(on) max at V_GS=-10V | 0.005 ohm (typical) | — |
| Gate-Source Threshold Voltage (V_GS(th)) | -1.0 V to -2.2 V | — |
| Gate Charge (Q_g) | [DATA_NEEDED: total gate charge] | — |
| Betriebstemperaturbereich | -55C to +175C (junction) | -55°C to +175°C (TJ) |
| Gehäuse | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Channel Mode | Enhancement | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (unlimited floor life at <30C/85% RH) | 1 |
| Technology | Trench MOSFET (OptiMOS) | OptiMOS™ P (Trench) |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID, Tc=25°C) | — | -70 A |
| Pulsed Drain Current (IDM) | — | -280 A |
| RDS(on) max @ VGS = -10 V | — | 4.2 mΩ |
| RDS(on) max @ VGS = -4.5 V | — | [DATA_NEEDED: RDS(on) @ -4.5 V] |
| Gate Threshold Voltage (VGS(th)) | — | -1.5 V (typ) |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Total Power Dissipation (PD @ Tc=25°C) | — | 150 W |
| Single-Pulse Avalanche Energy (EAS) | — | 290 mJ |