IPD11DP10NMATMA1 vs BSC076N04NDATMA1 Vergleich
Detaillierter Direktvergleich von IPD11DP10NMATMA1 von Infineon und BSC076N04NDATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD11DP10NMATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,62 | $0,82 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (Ta) | 3.4 A | — |
| Continuous Drain Current (Tc) | 22 A | — |
| Power Dissipation (Ta) | 3 W | 2.3 W |
| Power Dissipation (Tc) | 125 W | 65 W |
| On-Resistance RDS(on) max at VGS=10V | 111 mΩ | — |
| On-Resistance RDS(on) at ID=18A, VGS=10V | 111 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 4 V (typ at 1.7 mA) | 4 V (max, typical) |
| Total Gate Charge (Qg) at VGS=10V | 74 nC | — |
| Input Capacitance (Ciss) | 230 pF | — |
| Output Capacitance (Coss) | 63 pF | — |
| Betriebstemperaturbereich | -55 °C to +175 °C | — |
| Gehäuse | PG-TO252-3 (DPAK) | — |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS™ Trench | Trench MOSFET (OptiMOS 3) |
| RoHS-Status | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Betriebs-Sperrschichttemperatur | — | -55 C to +175 C |
| Gehäuse / Bauform | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |