IPD11DP10NMATMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of IPD11DP10NMATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD11DP10NMATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (Ta) | 3.4 A | — |
| Continuous Drain Current (Tc) | 22 A | — |
| Power Dissipation (Ta) | 3 W | 2.3 W |
| Power Dissipation (Tc) | 125 W | 65 W |
| On-Resistance RDS(on) max at VGS=10V | 111 mΩ | — |
| On-Resistance RDS(on) at ID=18A, VGS=10V | 111 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 4 V (typ at 1.7 mA) | 4 V (max, typical) |
| Total Gate Charge (Qg) at VGS=10V | 74 nC | — |
| Input Capacitance (Ciss) | 230 pF | — |
| Output Capacitance (Coss) | 63 pF | — |
| Operating Temperature Range | -55 °C to +175 °C | — |
| Package | PG-TO252-3 (DPAK) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS™ Trench | Trench MOSFET (OptiMOS 3) |
| RoHS Status | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Operating Junction Temperature | — | -55 C to +175 C |
| Package / Case | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |