IPD11DP10NMATMA1 vs BSC076N04NDATMA1 Comparison

Detailed side-by-side comparison of IPD11DP10NMATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD11DP10NMATMA1 IPD11DP10NMATMA1 - 100V P-Ch OptiMOS MOSFET | Infineon

IPD11DP10NMATMA1 - 100V P-Ch OptiMOS MOSFET | Infineon

IPD11DP10NMATMA1 βœ“ Active
Infineon
BSC076N04NDATMA1

BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 βœ“ Active

Specification Comparison

Parameter IPD11DP10NMATMA1 BSC076N04NDATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.82
Polarity P-Channel β€”
Drain-Source Voltage (VDS) -100 V β€”
Continuous Drain Current (Ta) 3.4 A β€”
Continuous Drain Current (Tc) 22 A β€”
Power Dissipation (Ta) 3 W 2.3 W
Power Dissipation (Tc) 125 W 65 W
On-Resistance RDS(on) max at VGS=10V 111 mΞ© β€”
On-Resistance RDS(on) at ID=18A, VGS=10V 111 mΞ© β€”
Gate Threshold Voltage (VGS(th)) 4 V (typ at 1.7 mA) 4 V (max, typical)
Total Gate Charge (Qg) at VGS=10V 74 nC β€”
Input Capacitance (Ciss) 230 pF β€”
Output Capacitance (Coss) 63 pF β€”
Operating Temperature Range -55 Β°C to +175 Β°C β€”
Package PG-TO252-3 (DPAK) β€”
Mounting Type Surface Mount Surface Mount
Technology OptiMOSβ„’ Trench Trench MOSFET (OptiMOS 3)
RoHS Status Compliant β€”
Manufacturer β€” Infineon Technologies
Series β€” OptiMOS 3
Configuration β€” Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max β€” 40 V
Continuous Drain Current (ID) β€” 20 A (Tc)
On-Resistance RDS(on) max β€” 7.6 mOhm
Qgd/Qgs Ratio β€” < 0.8 (high shot-through immunity)
Operating Junction Temperature β€” -55 C to +175 C
Package / Case β€” PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free β€” Compliant (Pb-free plating)
FET Type β€” 2x N-Channel MOSFET array

Datasheets & Resources

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