IPD30N08S2L21ATMA1 vs BSC076N06NS3GATMA1 Vergleich
Detaillierter Direktvergleich von IPD30N08S2L21ATMA1 von Infineon und BSC076N06NS3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon
IPD30N08S2L21ATMA1 ✓ AktivInfineon
BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon
BSC076N06NS3GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPD30N08S2L21ATMA1 | BSC076N06NS3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,48 | $0,65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 75 V | 60 V |
| Continuous Drain Current (ID) at Tc=25C | 30 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-State Resistance (RDS(on)) at VGS=10 V | 26 milliohm (typ) | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level (L series) | 2.0 V to 3.5 V |
| Gate Charge (Qg) typ | 56 nC | — |
| Power Dissipation (PD) at Tc=25C | 136 W | — |
| Betriebstemperaturbereich | -55C to +175C | -55C to +150C |
| Maximum Junction Temperature | +175C | — |
| Gehäuse | PG-TO252-3-11 (DPAK-2) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (Drain tab + Gate + Source) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS-Status | Compliant | — |
| MSL-Level | 1 | 1 (unlimited) |
| Product Family | — | OptiMOS 3 |
| Technology | — | N-Channel Trench MOSFET |
| Continuous Drain Current (ID) at TC=25C | — | 50 A |
| On-Resistance RDS(on) max at VGS=10V | — | 7.6 mΩ |
| On-Resistance RDS(on) max at VGS=4.5V | — | 10.4 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 69 W |
| RoHS Compliance | — | Compliant |
| Halogenfrei | — | Yes (per Infineon product page) |