IPD30N08S2L21ATMA1 vs IPD30N06S2L13ATMA4 Vergleich
Detaillierter Direktvergleich von IPD30N08S2L21ATMA1 von Infineon und IPD30N06S2L13ATMA4 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon
IPD30N08S2L21ATMA1 ✓ AktivInfineon
IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N06S2L13ATMA4 ✓ AktivSpezifikationsvergleich
| Parameter | IPD30N08S2L21ATMA1 | IPD30N06S2L13ATMA4 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,48 | $0,48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 75 V | — |
| Continuous Drain Current (ID) at Tc=25C | 30 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-State Resistance (RDS(on)) at VGS=10 V | 26 milliohm (typ) | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level (L series) | — |
| Gate Charge (Qg) typ | 56 nC | — |
| Power Dissipation (PD) at Tc=25C | 136 W | — |
| Betriebstemperaturbereich | -55C to +175C | — |
| Maximum Junction Temperature | +175C | — |
| Gehäuse | PG-TO252-3-11 (DPAK-2) | PG-TO252-3-11 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (Drain tab + Gate + Source) | 3 (Drain tab + Gate + Source) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS-Status | Compliant | — |
| MSL-Level | 1 | — |
| Part Family | — | OptiMOS |
| Channel Type | — | N-Channel |
| Mode | — | Enhancement |
| Drain-Source Voltage (Vds) | — | 55 V |
| Continuous Drain Current (Id) | — | 30 A (Tc) |
| Power Dissipation (Pd) | — | 136 W (Tc) |
| Betriebstemperatur | — | -55 °C to +175 °C (Tj) |
| MSL (Moisture Sensitivity Level) | — | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) |
| Lead-Free / RoHS | — | Yes (Green Package) |
| Avalanche Tested | — | 100 % production-tested |
| Technology | — | Planar (OptiMOS) |
| On-State Resistance (Rds(on)) | — | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] |
| Gate-Source Threshold (Vgs(th)) | — | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typ at Vds=25V] |
| Diode Reverse Recovery (trr) | — | [DATA_NEEDED: trr typ] |
| Tape and Reel Packaging | — | Yes (T&R per IEC 60286-3) |