IPD30N08S2L21ATMA1 vs IPD30N06S2L13ATMA4 비교

다음의 상세 나란히 비교: IPD30N08S2L21ATMA1 제조: Infineon 및 IPD30N06S2L13ATMA4 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IPD30N08S2L21ATMA1 IPD30N06S2L13ATMA4
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.48 $0.48
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS —
트랜지스터 유형 N-Channel MOSFET —
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID) at Tc=25C 30 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-State Resistance (RDS(on)) at VGS=10 V 26 milliohm (typ) —
Gate Threshold Voltage (VGS(th)) Logic-level (L series) —
Gate Charge (Qg) typ 56 nC —
Power Dissipation (PD) at Tc=25C 136 W —
동작 온도 범위 -55C to +175C —
Maximum Junction Temperature +175C —
패키지 PG-TO252-3-11 (DPAK-2) PG-TO252-3-11 (DPAK)
실장 유형 Surface Mount Surface Mount
핀 수 3 (Drain tab + Gate + Source) 3 (Drain tab + Gate + Source)
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
RoHS 상태 Compliant —
MSL 레벨 1 —
Part Family — OptiMOS
Channel Type — N-Channel
Mode — Enhancement
Drain-Source Voltage (Vds) — 55 V
Continuous Drain Current (Id) — 30 A (Tc)
Power Dissipation (Pd) — 136 W (Tc)
동작 온도 — -55 °C to +175 °C (Tj)
MSL (Moisture Sensitivity Level) — MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow)
Lead-Free / RoHS — Yes (Green Package)
Avalanche Tested — 100 % production-tested
Technology — Planar (OptiMOS)
On-State Resistance (Rds(on)) — [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V]
Gate-Source Threshold (Vgs(th)) — Logic-level (typ [DATA_NEEDED: Vth typ/min/max])
Total Gate Charge (Qg) — [DATA_NEEDED: Qg @ Vgs=10V, Id=30A]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typ at Vds=25V]
Diode Reverse Recovery (trr) — [DATA_NEEDED: trr typ]
Tape and Reel Packaging — Yes (T&R per IEC 60286-3)

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