IPD30N10S3L34ATMA1 vs IPD35N10S3L26ATMA2 Vergleich
Detaillierter Direktvergleich von IPD30N10S3L34ATMA1 von Infineon und IPD35N10S3L26ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD30N10S3L34ATMA1 - 100V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N10S3L34ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPD30N10S3L34ATMA1 | IPD35N10S3L26ATMA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,38 | $1,05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T2 | OptiMOS-T |
| Transistortyp | N-Channel Enhancement Mode MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc=25°C) | 30 A | — |
| Pulsed Drain Current (IDM) | 180 A | — |
| Power Dissipation (PD, Tc=25°C) | 57 W | — |
| Drain-Source On-Resistance (RDS(on) max) | 31 mΩ @ VGS=10 V | — |
| Gate-Source Threshold Voltage (VGS(th) typ) | 1.7 V (range 1.0 V to 2.5 V) | — |
| Total Gate Charge (Qg typ) | 23 nC | — |
| Betriebs-Sperrschichttemperatur | -55°C to +175°C | — |
| Gehäuse | PG-TO252-3-11 (DPAK-2 / SC-63) | PG-TO252-3-11 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| MSL-Level | 1 (JEDEC J-STD-020, 260°C peak reflow) | [DATA_NEEDED: MSL rating] |
| RoHS / REACH | Compliant | — |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Avalanche Rated | 100% Avalanche tested | — |
| Continuous Drain Current (ID, Tc) | — | 35 A |
| On-Resistance R<sub>DS(on)</sub> max | — | 24 mOhm |
| Power Dissipation (Ptot, Tc) | — | 71 W |
| Gate Threshold V<sub>GS(th)</sub> | — | [DATA_NEEDED: gate threshold typical/range] |
| Betriebstemperaturbereich | — | [DATA_NEEDED: Tj min/max] |
| Pin-Anzahl | — | 3 (Drain, Source, Gate + tab) |
| Technology | — | Trench MOSFET (OptiMOS-T) |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes |