IPD30N10S3L34ATMA1 vs IPD35N10S3L26ATMA2 Comparison

Detailed side-by-side comparison of IPD30N10S3L34ATMA1 by Infineon and IPD35N10S3L26ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD30N10S3L34ATMA1 IPD35N10S3L26ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T2 OptiMOS-T
Transistor Type N-Channel Enhancement Mode MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc=25°C) 30 A —
Pulsed Drain Current (IDM) 180 A —
Power Dissipation (PD, Tc=25°C) 57 W —
Drain-Source On-Resistance (RDS(on) max) 31 mΩ @ VGS=10 V —
Gate-Source Threshold Voltage (VGS(th) typ) 1.7 V (range 1.0 V to 2.5 V) —
Total Gate Charge (Qg typ) 23 nC —
Operating Junction Temperature -55°C to +175°C —
Package PG-TO252-3-11 (DPAK-2 / SC-63) PG-TO252-3-11 (DPAK)
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101
MSL Level 1 (JEDEC J-STD-020, 260°C peak reflow) [DATA_NEEDED: MSL rating]
RoHS / REACH Compliant —
Lead-Free / Halogen-Free Yes / Yes —
Avalanche Rated 100% Avalanche tested —
Continuous Drain Current (ID, Tc) — 35 A
On-Resistance R<sub>DS(on)</sub> max — 24 mOhm
Power Dissipation (Ptot, Tc) — 71 W
Gate Threshold V<sub>GS(th)</sub> — [DATA_NEEDED: gate threshold typical/range]
Operating Temperature Range — [DATA_NEEDED: Tj min/max]
Pin Count — 3 (Drain, Source, Gate + tab)
Technology — Trench MOSFET (OptiMOS-T)
RoHS Status — Compliant
Lead-Free — Yes

Datasheets & Resources

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