IPD50N03S4L06ATMA1 vs BSZ031NE2LS5ATMA1 Vergleich
Detaillierter Direktvergleich von IPD50N03S4L06ATMA1 von Infineon und BSZ031NE2LS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD50N03S4L06ATMA1 | BSZ031NE2LS5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,49 | $0,26 |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (V_DS) | 30 V | — |
| Continuous Drain Current (I_D, Tc) | 50 A | — |
| On-State Resistance (R_DS(on) max) | 5.5 mOhm at V_GS = 10 V | — |
| Gate Threshold Voltage (V_GS(th) typ) | 2.2 V | — |
| Total Gate Charge (Q_g) | 31 nC at V_GS = 10 V | — |
| Input Capacitance (C_iss) | 2.33 nF | — |
| Output Capacitance (C_oss) | 600 pF | — |
| Reverse Transfer Capacitance (C_rss) | 34 pF | — |
| Power Dissipation (P_D) | 56 W at Tc = 25 C | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | -55 C to +150 C |
| Gehäuse | PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (up to 260 C peak reflow) | [DATA_NEEDED: MSL] |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Rating | 100% Avalanche Tested | — |
| RoHS-Status | Compliant (Green Package) | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSZ031NE2LS5ATMA1 |
| Technology / Platform | — | OptiMOS 5 25V/30V N-channel trench MOSFET |
| Drain-Source Voltage (VDS) max | — | 25 V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Continuous Drain Current (ID) at Ta=25C | — | 19 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| RDS(on) max @ VGS=10 V | — | 3.1 mOhm |
| RDS(on) typical @ VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Power Dissipation at Ta=25C | — | 2.1 W |
| Power Dissipation at Tc=25C | — | 30 W |
| Lead-Free | — | Yes |
| Halogenfrei | — | Yes |