IPD50N03S4L06ATMA1 vs BSZ031NE2LS5ATMA1 Comparison
Detailed side-by-side comparison of IPD50N03S4L06ATMA1 by Infineon and BSZ031NE2LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ031NE2LS5ATMA1 - 25V N-Ch 3.1mOhm OptiMOS 5 MOSFET | Infineon
BSZ031NE2LS5ATMA1 β ActiveSpecification Comparison
| Parameter | IPD50N03S4L06ATMA1 | BSZ031NE2LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.49 | $0.26 |
| FET Type | N-Channel, Enhancement Mode | β |
| Drain-Source Voltage (V_DS) | 30 V | β |
| Continuous Drain Current (I_D, Tc) | 50 A | β |
| On-State Resistance (R_DS(on) max) | 5.5 mOhm at V_GS = 10 V | β |
| Gate Threshold Voltage (V_GS(th) typ) | 2.2 V | β |
| Total Gate Charge (Q_g) | 31 nC at V_GS = 10 V | β |
| Input Capacitance (C_iss) | 2.33 nF | β |
| Output Capacitance (C_oss) | 600 pF | β |
| Reverse Transfer Capacitance (C_rss) | 34 pF | β |
| Power Dissipation (P_D) | 56 W at Tc = 25 C | β |
| Operating Junction Temperature | -55 C to +175 C | -55 C to +150 C |
| Package | PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (up to 260 C peak reflow) | [DATA_NEEDED: MSL] |
| Automotive Qualification | AEC-Q101 | β |
| Avalanche Rating | 100% Avalanche Tested | β |
| RoHS Status | Compliant (Green Package) | Compliant |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSZ031NE2LS5ATMA1 |
| Technology / Platform | β | OptiMOS 5 25V/30V N-channel trench MOSFET |
| Drain-Source Voltage (VDS) max | β | 25 V |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max] |
| Continuous Drain Current (ID) at Ta=25C | β | 19 A |
| Continuous Drain Current (ID) at Tc=25C | β | 40 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| RDS(on) max @ VGS=10 V | β | 3.1 mOhm |
| RDS(on) typical @ VGS=4.5 V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Power Dissipation at Ta=25C | β | 2.1 W |
| Power Dissipation at Tc=25C | β | 30 W |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |