IPD50N04S408ATMA1 vs IPB021N10NM5LF2ATMA1 Vergleich
Detaillierter Direktvergleich von IPD50N04S408ATMA1 von Infineon und IPB021N10NM5LF2ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPD50N04S408ATMA1 | IPB021N10NM5LF2ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,69 | $2,75 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T2 | — |
| Polarity | N-Channel | — |
| Mode | Enhancement-mode | — |
| Drain-Source Voltage (V DS) | 40 V | — |
| Continuous Drain Current (I D, Tc) | 50 A | — |
| Power Dissipation (P D, Tc) | 46 W | — |
| Gehäuse | PG-TO252-3-313 (DPAK) | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 °C to +175 °C | -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range] |
| MSL-Level | MSL1 (260 °C peak reflow) | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Tested | 100 % Avalanche tested | — |
| Green Package (RoHS) | RoHS compliant | — |
| Gate Threshold Voltage (V GS(th)) | [DATA_NEEDED: V GS(th) typical] | — |
| On-State Resistance (R DS(on)) | [DATA_NEEDED: R DS(on) at V GS = 10 V] | — |
| Total Gate Charge (Q G) | [DATA_NEEDED: Q G typical] | — |
| Part Family | — | OptiMOS 5 Linear FET 2 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 176 A |
| Continuous Drain Current (I_D) at T_A=25°C | — | 30 A |
| R_DS(on) Maximum | — | 2.1 mΩ |
| Gate-Source Voltage (V_GS) Maximum | — | ±20 V [DATA_NEEDED: absolute max rated V_GS] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min] |
| Power Dissipation (P_D) at T_C=25°C | — | 375 W |
| Power Dissipation (P_D) at T_A=25°C | — | 3.8 W |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | — | 10 V, 15 V |
| Technology | — | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) |
| RoHS-Status | — | Compliant |