IPD50N04S408ATMA1 vs IPB021N10NM5LF2ATMA1 比較

詳細な並列比較: IPD50N04S408ATMA1 メーカー: Infineon および IPB021N10NM5LF2ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

Infineon
IPD50N04S408ATMA1 IPD50N04S408ATMA1 - 40V 50A N-Ch OptiMOS-T2 MOSFET | Infineon

IPD50N04S408ATMA1 - 40V 50A N-Ch OptiMOS-T2 MOSFET | Infineon

IPD50N04S408ATMA1 ✓ 生産中
Infineon
IPB021N10NM5LF2ATMA1 IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon

IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon

IPB021N10NM5LF2ATMA1 ✓ 生産中

仕様比較

パラメータ IPD50N04S408ATMA1 IPB021N10NM5LF2ATMA1
ブランド Infineon Infineon
カテゴリ MOSFETs MOSFETs
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $0.69 $2.75
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T2 —
Polarity N-Channel —
Mode Enhancement-mode —
Drain-Source Voltage (V DS) 40 V —
Continuous Drain Current (I D, Tc) 50 A —
Power Dissipation (P D, Tc) 46 W —
パッケージ PG-TO252-3-313 (DPAK) PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab)
実装タイプ Surface Mount Surface Mount
動作温度範囲 -55 °C to +175 °C -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range]
MSLレベル MSL1 (260 °C peak reflow) [DATA_NEEDED: confirm MSL rating from manufacturer datasheet]
Automotive Qualification AEC-Q101 —
Avalanche Tested 100 % Avalanche tested —
Green Package (RoHS) RoHS compliant —
Gate Threshold Voltage (V GS(th)) [DATA_NEEDED: V GS(th) typical] —
On-State Resistance (R DS(on)) [DATA_NEEDED: R DS(on) at V GS = 10 V] —
Total Gate Charge (Q G) [DATA_NEEDED: Q G typical] —
Part Family — OptiMOS 5 Linear FET 2
Polarity / Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 100 V
Continuous Drain Current (I_D) at T_C=25°C — 176 A
Continuous Drain Current (I_D) at T_A=25°C — 30 A
R_DS(on) Maximum — 2.1 mΩ
Gate-Source Voltage (V_GS) Maximum — ±20 V [DATA_NEEDED: absolute max rated V_GS]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical/min]
Power Dissipation (P_D) at T_C=25°C — 375 W
Power Dissipation (P_D) at T_A=25°C — 3.8 W
Drive Voltage (Max R_DS(on), Min R_DS(on)) — 10 V, 15 V
Technology — OptiMOS 5 trench-gate MOSFET (Linear FET optimized)
RoHS ステータス — Compliant

データシート&リソース

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