IPD50P04P413ATMA2 vs IRF4905STRRPBF Vergleich
Detaillierter Direktvergleich von IPD50P04P413ATMA2 von Infineon und IRF4905STRRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD50P04P413ATMA2 | IRF4905STRRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,42 | $0,94 |
| Polarity / Device Type | P-Channel MOSFET | — |
| Technology | OptiMOS-P2 (Trench) | HEXFET (Advanced Process) |
| Drain-Source Voltage (VDS) | -40 V | -55 V |
| Continuous Drain Current (TC=25°C, ID) | 50 A | — |
| Continuous Drain Current (TC=100°C, ID) | [DATA_NEEDED: ID @ 100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (TC=25°C, Ptot) | 58 W | — |
| On-State Resistance (RDS(on)) @ VGS=-10V | 9.2 mΩ (typ) / 12.6 mΩ (max) | — |
| On-State Resistance (RDS(on)) @ VGS=-4.5V | [DATA_NEEDED: RDS(on) @ VGS=-4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | -2.0 V to -4.0 V |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V |
| Maximum Junction Temperature (TJ,max) | 175 °C | — |
| Betriebstemperaturbereich | -55 °C to +175 °C | — |
| Gehäuse | PG-TO252-3-313 (DPAK) | D2PAK (TO-263-3) |
| Montageart | Surface Mount | Surface Mount |
| Standard Pack Quantity (13" reel) | 2500 pcs | — |
| MSL-Level | 1 | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS-Status | Compliant | Compliant |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID) at TC=25C | — | -74 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| RDS(on) max at VGS=-10V | — | 20 mOhm |
| RDS(on) max at VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Total Gate Charge (Qg) | — | 120 nC |
| Power Dissipation (PD) at TC=25C | — | 170 W |
| Betriebs-Sperrschichttemperatur | — | -55 C to +175 C |
| Lead-Free | — | Yes |