IPD50P04P413ATMA2 vs IRF4905STRRPBF 비교
다음의 상세 나란히 비교: IPD50P04P413ATMA2 제조: Infineon 및 IRF4905STRRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPD50P04P413ATMA2 | IRF4905STRRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.42 | $0.94 |
| Polarity / Device Type | P-Channel MOSFET | — |
| Technology | OptiMOS-P2 (Trench) | HEXFET (Advanced Process) |
| Drain-Source Voltage (VDS) | -40 V | -55 V |
| Continuous Drain Current (TC=25°C, ID) | 50 A | — |
| Continuous Drain Current (TC=100°C, ID) | [DATA_NEEDED: ID @ 100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (TC=25°C, Ptot) | 58 W | — |
| On-State Resistance (RDS(on)) @ VGS=-10V | 9.2 mΩ (typ) / 12.6 mΩ (max) | — |
| On-State Resistance (RDS(on)) @ VGS=-4.5V | [DATA_NEEDED: RDS(on) @ VGS=-4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | -2.0 V to -4.0 V |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V |
| Maximum Junction Temperature (TJ,max) | 175 °C | — |
| 동작 온도 범위 | -55 °C to +175 °C | — |
| 패키지 | PG-TO252-3-313 (DPAK) | D2PAK (TO-263-3) |
| 실장 유형 | Surface Mount | Surface Mount |
| Standard Pack Quantity (13" reel) | 2500 pcs | — |
| MSL 레벨 | 1 | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS 상태 | Compliant | Compliant |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID) at TC=25C | — | -74 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| RDS(on) max at VGS=-10V | — | 20 mOhm |
| RDS(on) max at VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Total Gate Charge (Qg) | — | 120 nC |
| Power Dissipation (PD) at TC=25C | — | 170 W |
| 동작 접합 온도 | — | -55 C to +175 C |
| Lead-Free | — | Yes |