IPD50P04P4L11ATMA2 vs IPB120P04P4L03ATMA2 Vergleich

Detaillierter Direktvergleich von IPD50P04P4L11ATMA2 von Infineon und IPB120P04P4L03ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IPD50P04P4L11ATMA2 IPD50P04P4L11ATMA2 - P-Ch 40V 50A 10.6mΩ MOSFET | Infineon

IPD50P04P4L11ATMA2 - P-Ch 40V 50A 10.6mΩ MOSFET | Infineon

IPD50P04P4L11ATMA2 ✓ Aktiv

Spezifikationsvergleich

Parameter IPD50P04P4L11ATMA2 IPB120P04P4L03ATMA2
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,82 $1,74
Transistortyp P-Channel MOSFET, enhancement mode —
Drain-Source Voltage VDS -40 V —
Continuous Drain Current ID (TC = 25 °C) -50 A —
On-State Resistance RDS(on) (VGS = -10 V) 10.6 mΩ typical —
Gate-Source Voltage VGS (max) ±20 V —
Gate Threshold Voltage VGS(th) -1.0 V to -2.5 V typical —
Typical Gate Charge Qg 45 nC —
Power Dissipation PD (TC = 25 °C) 58 W —
Betriebs-Sperrschichttemperatur -55 °C to +175 °C -55C to +175C
Gehäuse PG-TO252-3-313 (DPAK), surface mount PG-TO263-3-2 (D2PAK)
Pin-Anzahl 3 (Drain / Tab / Source / Gate) 3 (Gate, Drain, Source)
Montageart Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
RoHS Compliance Compliant —
MSL-Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Transistor Polarity — P-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25C) — 120 A
Power Dissipation (PD, Tc=25C) — 136 W
On-Resistance (RDS(on)) — 3.1 mΩ (typ, per Infineon summary)
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/range]
Technology Family — OptiMOS-P2
Configuration — Single P-Channel MOSFET
RoHS-Status — Compliant (per Infineon product page)

Datenblätter & Ressourcen

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